Title | ||
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An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM |
Abstract | ||
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For the heterogeneous-structured high bandwidth memory (HBM) DRAM, it is important to guarantee the reliability of TSV connections. An exact TSV current scan and repair method is proposed, that uses similar to the correlated double sampling method. The register-based pre-repair method improves testability. The measurement results for thousands of TSV shows impedance distribution under 0.1 ohm. Methods are integrated in 8Gb HBM stacked DRAM using 29nm process. |
Year | DOI | Venue |
---|---|---|
2014 | 10.1109/VLSIC.2014.6858368 | VLSIC |
Field | DocType | Citations |
Dram,Testability,Correlated double sampling,Computer science,Ohm,High Bandwidth Memory,Electronic engineering,Electrical impedance,Electrical engineering | Conference | 3 |
PageRank | References | Authors |
1.19 | 1 | 11 |
Name | Order | Citations | PageRank |
---|---|---|---|
Dong Uk Lee | 1 | 80 | 7.98 |
Kyung Whan Kim | 2 | 85 | 6.11 |
Kwan-Weon Kim | 3 | 44 | 6.51 |
Kang Seol Lee | 4 | 22 | 2.65 |
Sang Jin Byeon | 5 | 22 | 2.31 |
Jin-Hee Cho | 6 | 26 | 4.15 |
Han Ho Jin | 7 | 3 | 1.19 |
Sang Kyun Nam | 8 | 3 | 1.19 |
Jaejin Lee | 9 | 22 | 2.31 |
Jun Hyun Chun | 10 | 39 | 5.17 |
s hong | 11 | 54 | 4.05 |