Title
An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM
Abstract
For the heterogeneous-structured high bandwidth memory (HBM) DRAM, it is important to guarantee the reliability of TSV connections. An exact TSV current scan and repair method is proposed, that uses similar to the correlated double sampling method. The register-based pre-repair method improves testability. The measurement results for thousands of TSV shows impedance distribution under 0.1 ohm. Methods are integrated in 8Gb HBM stacked DRAM using 29nm process.
Year
DOI
Venue
2014
10.1109/VLSIC.2014.6858368
VLSIC
Field
DocType
Citations 
Dram,Testability,Correlated double sampling,Computer science,Ohm,High Bandwidth Memory,Electronic engineering,Electrical impedance,Electrical engineering
Conference
3
PageRank 
References 
Authors
1.19
1
11
Name
Order
Citations
PageRank
Dong Uk Lee1807.98
Kyung Whan Kim2856.11
Kwan-Weon Kim3446.51
Kang Seol Lee4222.65
Sang Jin Byeon5222.31
Jin-Hee Cho6264.15
Han Ho Jin731.19
Sang Kyun Nam831.19
Jaejin Lee9222.31
Jun Hyun Chun10395.17
s hong11544.05