Title
Design of Silicon Photonic Interconnect ICs in 65-nm CMOS Technology.
Abstract
This paper describes a design methodology for CMOS silicon photonic interconnect ICs according to CMOS technology scaling. As the CMOS process is scaled, the endurable voltage stress and the intrinsic gain of the CMOS devices are reduced; therefore, a design of the highswing transmitter and high-gain receiver required at the silicon photonic interface becomes much more challenging. In this paper, ...
Year
DOI
Venue
2016
10.1109/TVLSI.2015.2504459
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Keywords
Field
DocType
Silicon photonics,Modulation,CMOS integrated circuits,Logic gates,CMOS technology,Optical transmitters,Stress
Transmitter,Inverter,Logic gate,Computer science,Voltage,Electronic engineering,Photodetector,CMOS,Transimpedance amplifier,Silicon photonics,Electrical engineering
Journal
Volume
Issue
ISSN
24
6
1063-8210
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Woo-Rham Bae14014.93
Gyu-Seob Jeong2219.00
Yoonsoo Kim312919.27
Hankyu Chi411.38
Deog-Kyoon Jeong5626119.05