Name
Abstract | ||
|---|---|---|
An approach combining molecular dynamics simulations with Kinetic Monte Carlo simulations is proposed to model the temporal evolution of single particle displacement damage in silicon. The three dimensional distributions of primary defects induced by Si recoils within 10ps are obtained by molecular dynamics simulations and subsequently the long-term evolution (over 105s) of multiple types of defects is simulated with Kinetic Monte Carlo technique fed by molecular simulation results. Based on classical Shockley–Read–Hall theory, the annealing factors of radiation-induced dark current related to the evolution of defects are predicted for photodiodes of 0.18μm CMOS image sensors under neutron irradiation. The calculation results are consistent with the experimental data. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1016/j.microrel.2016.03.004 | Microelectronics Reliability |
Keywords | Field | DocType |
Displacement damage,Defect annealing,Dark current,Photodiodes,Multiscale modeling | Particle displacement,Image sensor,Multiscale modeling,Dark current,Kinetic Monte Carlo,Electronic engineering,Molecular dynamics,Engineering,Silicon,Photodiode | Journal |
Volume | ISSN | Citations |
60 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 9 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Du Tang | 1 | 3 | 1.85 |
| Ignacio Martin-Bragado | 2 | 4 | 1.15 |
| Chaohui He | 3 | 8 | 3.65 |
| Hang Zang | 4 | 0 | 0.34 |
| Cen Xiong | 5 | 3 | 1.85 |
| Yonghong Li | 6 | 2 | 1.23 |
| Daxi Guo | 7 | 0 | 0.34 |
| Peng Zhang | 8 | 0 | 0.34 |
| Jinxin Zhang | 9 | 3 | 2.19 |