Title | ||
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A Counter-based Read Circuit Tolerant to Process Variation for 0.4-V Operating STT-MRAM. |
Abstract | ||
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The capacity of embedded memory on LSIs has kept increasing. It is important to reduce the leakage power of embedded memory for low-power LSIs. In fact, the ITRS predicts that the leakage power in embedded memory will account for 40% of all power consumption by 2024 [1]. A spin transfer torque magneto-resistance random access memory (STT-MRAM) is promising for use as non-volatile memory to reduce the leakage power. It is useful because it can function at low voltages and has a lifetime of over 1016 write cycles [2]. In addition, the STT-MRAM technology has a smaller bit cell than an SRAM. Making the STT-MRAM is suitable for use in high-density products [3–7]. The STT-MRAM uses magnetic tunnel junction (MTJ). The MTJ has two states: a parallel state and an anti-parallel state. These states mean that the magnetization direction of the MTJ’s layers are the same or different. The directions pair determines the MTJ’s magneto- resistance value. The states of MTJ can be changed by the current flowing. The MTJ resistance becomes low in the parallel state and high in the anti-parallel state. The MTJ potentially operates at less than 0.4 V [8]. In other hands, it is difficult to design peripheral circuitry for an STT-MRAM array at such a low voltage. In this paper, we propose a counter-based read circuit that functions at 0.4 V, which is tolerant of process variation and temperature fluctuation. |
Year | Venue | Field |
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2016 | IPSJ Trans. System LSI Design Methodology | Computer science,Electronic engineering,Static random-access memory,Magnetoresistive random-access memory,Non-volatile memory,Process variation,Low voltage,Tunnel magnetoresistance,Spin-transfer torque,Bit cell |
DocType | Volume | Citations |
Journal | 9 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
---|---|---|---|
Yohei Umeki | 1 | 2 | 1.72 |
koji yanagida | 2 | 3 | 1.61 |
Shusuke Yoshimoto | 3 | 30 | 12.56 |
Shintaro Izumi | 4 | 82 | 31.56 |
masahiko yoshimoto | 5 | 117 | 34.06 |
Hiroshi Kawaguchi | 6 | 395 | 91.51 |
Koji Tsunoda | 7 | 2 | 1.04 |
T. Sugii | 8 | 21 | 4.18 |