Title
A Counter-based Read Circuit Tolerant to Process Variation for 0.4-V Operating STT-MRAM.
Abstract
The capacity of embedded memory on LSIs has kept increasing. It is important to reduce the leakage power of embedded memory for low-power LSIs. In fact, the ITRS predicts that the leakage power in embedded memory will account for 40% of all power consumption by 2024 [1]. A spin transfer torque magneto-resistance random access memory (STT-MRAM) is promising for use as non-volatile memory to reduce the leakage power. It is useful because it can function at low voltages and has a lifetime of over 1016 write cycles [2]. In addition, the STT-MRAM technology has a smaller bit cell than an SRAM. Making the STT-MRAM is suitable for use in high-density products [3–7]. The STT-MRAM uses magnetic tunnel junction (MTJ). The MTJ has two states: a parallel state and an anti-parallel state. These states mean that the magnetization direction of the MTJ’s layers are the same or different. The directions pair determines the MTJ’s magneto- resistance value. The states of MTJ can be changed by the current flowing. The MTJ resistance becomes low in the parallel state and high in the anti-parallel state. The MTJ potentially operates at less than 0.4 V [8]. In other hands, it is difficult to design peripheral circuitry for an STT-MRAM array at such a low voltage. In this paper, we propose a counter-based read circuit that functions at 0.4 V, which is tolerant of process variation and temperature fluctuation.
Year
Venue
Field
2016
IPSJ Trans. System LSI Design Methodology
Computer science,Electronic engineering,Static random-access memory,Magnetoresistive random-access memory,Non-volatile memory,Process variation,Low voltage,Tunnel magnetoresistance,Spin-transfer torque,Bit cell
DocType
Volume
Citations 
Journal
9
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
Yohei Umeki121.72
koji yanagida231.61
Shusuke Yoshimoto33012.56
Shintaro Izumi48231.56
masahiko yoshimoto511734.06
Hiroshi Kawaguchi639591.51
Koji Tsunoda721.04
T. Sugii8214.18