Name
Abstract | ||
|---|---|---|
The gate length of CMOS transistors is continuing to shrink down to the sub-10nm region and operating voltages are moving toward near-threshold and even sub-threshold values. With this trend, the number of electrons responsible for the total charge of a CMOS node is greatly reduced. As a consequence, thermal fluctuations that shift a gate from its equilibrium point may no longer have a negligible impact on circuit reliability. Time-domain analysis helps understand how transient faults affect a circuit and can guide designers in producing noise-resistant circuitry. However, modeling thermal noise in the time-domain is computationally very costly. Moreover, small fluctuations in electron occupation introduce time-varying biasing point fluctuations, increasing the modeling complexity. To address these challenges, this paper introduces a new approach to modeling thermal noise directly in the time domain by developing a series of stochastic differential equations (SDE) to model various transient effects in the presence of thermal noise. In comparisons to SPICE-based simulations, our approach can provide 3 orders of magnitude speedup in simulation time, with comparable accuracy. This simulation framework is especially valuable for detecting rare events that could translate into fault-inducing noise transients. While it is computationally infeasible to use SPICE to detect such rare events due to thermal noise, we introduce a new iterative approach that allows detecting 6σ events in a matter of a few hours.
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Year | DOI | Venue |
|---|---|---|
2016 | 10.1145/2897937.2897960 | 2016 ACM/EDAC/IEEE DESIGN AUTOMATION CONFERENCE (DAC) |
Keywords | Field | DocType |
gate length,CMOS transistors,CMOS node,thermal fluctuations,circuit reliability,time-domain analysis,noise-resistant circuitry,thermal noise modeling,electron occupation,time-varying biasing point fluctuations,stochastic differential equations,SDE,fault-inducing noise transients | Time domain,Logic gate,Spice,Computer science,Noise (electronics),Circuit reliability,Electronic engineering,CMOS,Thermal fluctuations,Rare events | Conference |
ISBN | Citations | PageRank |
978-1-4503-4236-0 | 1 | 0.36 |
References | Authors | |
17 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Marco Donato | 1 | 31 | 5.83 |
| R. Iris Bahar | 2 | 878 | 84.31 |
| William R. Patterson | 3 | 5 | 1.46 |
| Alexander Zaslavsky | 4 | 13 | 2.94 |