Name
Title | ||
|---|---|---|
55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters. |
Abstract | ||
|---|---|---|
Two distributed circuits based on MOS-HBT cascodes are reported in a 55-nm SiGe BiCMOS technology and are aimed at a single-chip time-interleaved transceiver for future 1-Tb/s optical links. The first, a DC-135-GHz single-ended distributed amplifier (DA) was optimized for low noise, linear receivers, and has a measured noise figure (NF) <;7 dB up to 88.5 GHz, 800 mVpp of linear input range, and 8.... |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/JSSC.2016.2593004 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Bandwidth,Silicon germanium,BiCMOS integrated circuits,Linearity,Heterojunction bipolar transistors,Receivers,MOSFET | Optical modulator,Distributed amplifier,BiCMOS,Capacitance,Transceiver,Computer science,Noise figure,Electronic engineering,Bandwidth (signal processing),Electronic circuit | Journal |
Volume | Issue | ISSN |
51 | 9 | 0018-9200 |
Citations | PageRank | References |
2 | 0.58 | 4 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| James Hoffman | 1 | 4 | 1.29 |
| Stefan Shopov | 2 | 5 | 3.05 |
| Pascal Chevalier | 3 | 52 | 10.92 |
| Andreia Cathelin | 4 | 168 | 34.59 |
| Peter Schvan | 5 | 147 | 37.29 |
| Sorin P. Voinigescu | 6 | 221 | 53.57 |