Name
Title | ||
|---|---|---|
A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output. |
Abstract | ||
|---|---|---|
A 234-261-GHz signal source with record 7.2-dBm output power at 240 GHz and -105 dBc/Hz phase noise at 10-MHz offset is reported. Fabricated in a production 55-nm SiGe BiCMOS process with HBT fT/fMAX of 330/350 GHz, the circuit includes a 120-GHz fundamental frequency VCO with 1.2-V AMOS varactors, a broadband MOS-HBT cascode LO tree driving a divide-by-128 chain, and a doubler with a record drain... |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/JSSC.2016.2560198 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Power generation,Topology,Silicon germanium,Gain,BiCMOS integrated circuits,Bandwidth,Heterojunction bipolar transistors | BiCMOS,Fundamental frequency,Cascode,Computer science,Phase noise,Broadband,Electronic engineering,Voltage-controlled oscillator,dBc,Heterojunction bipolar transistor,Electrical engineering | Journal |
Volume | Issue | ISSN |
51 | 9 | 0018-9200 |
Citations | PageRank | References |
7 | 0.81 | 3 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Stefan Shopov | 1 | 7 | 0.81 |
| Andreea Balteanu | 2 | 8 | 2.57 |
| Juergen Hasch | 3 | 7 | 0.81 |
| Pascal Chevalier | 4 | 52 | 10.92 |
| Andreia Cathelin | 5 | 168 | 34.59 |
| Sorin P. Voinigescu | 6 | 221 | 53.57 |