Abstract | ||
---|---|---|
Memristors have been used in various applications, including single- and multi-bit storage units. The non-linear voltage-current relation in memristors is often seen as a problem, necessitating complex circuits and methods for a reliable write-in. In this paper, we take advantage of this phenomenon for storing more than one bit of information in a single memristor using digital bit streams. First, we demonstrate how two bits of information can be stored and read back from a single memristor unit. Then, we propose encoding schemes that can enhance the reliability of digitally writing two and three bits of data in a single memristor. To verify the reliability of this method for multi-bit data storage, we have run simulations based on the most prominent simulation models available. |
Year | DOI | Venue |
---|---|---|
2016 | 10.1109/ICEEE.2016.7751193 | 2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) |
Keywords | Field | DocType |
digital write-in scheme,multi-bit memristive storage,memristors,single-bit storage units,multibit storage units,nonlinear voltage-current relation,complex circuits,reliable write-in,digital bit streams,single memristor unit,multibit data storage | Data modeling,Memristor,Computer data storage,Computer science,Electronic engineering,Memistor,Computer hardware,Electronic circuit,Encoding (memory) | Conference |
ISBN | Citations | PageRank |
978-1-5090-3512-0 | 1 | 0.36 |
References | Authors | |
9 | 4 |
Name | Order | Citations | PageRank |
---|---|---|---|
Nima Taherinejad | 1 | 42 | 13.58 |
Sai Manoj P. D. | 2 | 10 | 4.23 |
Michael Rathmair | 3 | 23 | 4.60 |
Axel Jantsch | 4 | 1875 | 169.83 |