Title
Fully digital write-in scheme for multi-bit memristive storage
Abstract
Memristors have been used in various applications, including single- and multi-bit storage units. The non-linear voltage-current relation in memristors is often seen as a problem, necessitating complex circuits and methods for a reliable write-in. In this paper, we take advantage of this phenomenon for storing more than one bit of information in a single memristor using digital bit streams. First, we demonstrate how two bits of information can be stored and read back from a single memristor unit. Then, we propose encoding schemes that can enhance the reliability of digitally writing two and three bits of data in a single memristor. To verify the reliability of this method for multi-bit data storage, we have run simulations based on the most prominent simulation models available.
Year
DOI
Venue
2016
10.1109/ICEEE.2016.7751193
2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)
Keywords
Field
DocType
digital write-in scheme,multi-bit memristive storage,memristors,single-bit storage units,multibit storage units,nonlinear voltage-current relation,complex circuits,reliable write-in,digital bit streams,single memristor unit,multibit data storage
Data modeling,Memristor,Computer data storage,Computer science,Electronic engineering,Memistor,Computer hardware,Electronic circuit,Encoding (memory)
Conference
ISBN
Citations 
PageRank 
978-1-5090-3512-0
1
0.36
References 
Authors
9
4
Name
Order
Citations
PageRank
Nima Taherinejad14213.58
Sai Manoj P. D.2104.23
Michael Rathmair3234.60
Axel Jantsch41875169.83