Paper Info
Title
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation.
Abstract
We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability under ON-state conditions. Devices stressed in the ON-state showed a faster decrease in the maximum drain current (I-Dmax) compared to identical devices stressed in the OFF-state with a comparable electric field and temperature. Scanning electron microscope (SEM) images of ON-state stressed devices showed pit formation at locations away from the gate-edge in the drain-gate access region. Cross-sectional transmission electron microscope (TEM) images also showed dark features at the AlGaN/SiN interface away from the gate edge. Electron energy loss spectroscopy (EELS) analysis of the dark features indicated the presence of gallium, aluminum and oxygen. These dark features correlate with pits observed in the SEM micrographs. It is proposed that in addition to causing joule heating, energetic electrons in the 2D electron gas contribute to device degradation by promoting electrochemical oxidation of the AlGaN. (C) 2016 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2016
10.1016/j.microrel.2016.07.012
MICROELECTRONICS RELIABILITY
Keywords
Field
DocType
AlGaN/GaN,HEMT,ON-state,Reliability,III-V semiconductor,Wide band-gap semiconductor
Wide-bandgap semiconductor,Scanning electron microscope,Transmission electron microscopy,Electronic engineering,Engineering,Joule heating,High-electron-mobility transistor,Electron energy loss spectroscopy,Electron mobility,Electron
Journal
Volume
ISSN
Citations 
64
0026-2714
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
Syaranamual, G.J.132.25
Sasangka, W.A.232.25
Riko I. Made311.79
S. Arulkumaran400.68
G. I. Ng500.34
S. C. Foo600.34
Chee Lip Gan74210.12
Thompson, Carl V.85011.56