Title
Impact of FinFET on Near-Threshold Voltage Scalability.
Abstract
Near-threshold operations provide a powerful knob for improving energy efficiency and alleviating on-chip power densities. This article explores the impact of newest FinFET CMOS technologies (from 40 to 7 nm) on near-threshold computing in terms of performance and energy efficiency.
Year
DOI
Venue
2017
10.1109/MDAT.2016.2630303
IEEE Design & Test
Keywords
Field
DocType
FinFETs,Integrated circuit modeling,Parallel processing,Delays,Threshold voltage,Performance evaluation,Energy efficiency,Silicon,Density measurement,Voltage control
Computer science,Voltage control,Efficient energy use,Parallel processing,CMOS,Electronic engineering,Electrical engineering,Threshold voltage,Scalability
Journal
Volume
Issue
ISSN
34
2
2168-2356
Citations 
PageRank 
References 
1
0.36
6
Authors
9
Name
Order
Citations
PageRank
Nathaniel Ross Pinckney115510.34
Supreet Jeloka2416.41
Ronald G. Dreslinski3125881.02
Trevor Mudge46139659.74
Dennis Sylvester55295535.53
David Blaauw68916823.47
Lucian Shifren7313.55
Brian Cline89111.28
Saurabh Sinha919521.88