Name
Abstract | ||
|---|---|---|
A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling. The latter, including all known parasitic effects, enables the accurate determination of the fig... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/JPROC.2015.2500024 | Proceedings of the IEEE |
Keywords | DocType | Volume |
Heterojunction bipolar transistors,Silicon germanium,Integrated circuit modeling,BiCMOS integrated circuits,Performance evaluation,CMOS integrated circuits,Market research,Radio frequency,Terahertz materials,Electronics,CAD CAM | Journal | 105 |
Issue | ISSN | Citations |
6 | 0018-9219 | 1 |
PageRank | References | Authors |
0.48 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Michael Schröter | 1 | 1 | 0.48 |
| Tommy Rosenbaum | 2 | 1 | 0.48 |
| Pascal Chevalier | 3 | 52 | 10.92 |
| Bernd Heinemann | 4 | 28 | 6.98 |
| Sorin P. Voinigescu | 5 | 221 | 53.57 |
| Ed Preisler | 6 | 1 | 0.48 |
| Josef Böck | 7 | 14 | 4.57 |
| Anindya Mukherjee | 8 | 1 | 0.82 |