Name
Title | ||
|---|---|---|
Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon. |
Abstract | ||
|---|---|---|
This paper reviews the technology requirements of future 100-300-GHz millimeter-wave (mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor applications, as well as for 100-300-GBaud fiber-optic communication systems. Measurements of state-of-the-art silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), SiGe heterojunction bipolar transistors (HBTs), and of a variet... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/JPROC.2017.2672721 | Proceedings of the IEEE |
Keywords | DocType | Volume |
Silicon germanium,Logic gates,MOSFET,Heterojunction bipolar transistors,Optical fiber devices,Terahertz materials,Electronics,Radio frequency,Silicon-on-insulator,Millimeter wave devices | Journal | 105 |
Issue | ISSN | Citations |
6 | 0018-9219 | 2 |
PageRank | References | Authors |
0.38 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sorin P. Voinigescu | 1 | 221 | 53.57 |
| Stefan Shopov | 2 | 5 | 3.05 |
| James Bateman | 3 | 2 | 0.38 |
| Hassan Farooq | 4 | 2 | 0.38 |
| James Hoffman | 5 | 4 | 1.29 |
| Konstantinos Vasilakopoulos | 6 | 2 | 0.38 |