Name
Title | ||
|---|---|---|
High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques. |
Abstract | ||
|---|---|---|
In this paper, we present a high-density four-transistor (4T) static random access memory (SRAM) bitcell design for 3-D CoolCube technology platform based on 14-nm fully depleted-silicon on insulator MOS transistors to show the compatibility between the 4T SRAM and the 3-D design and the considerable density gain that they can achieve when combined. The 4T SRAM bitcell has been characterized to in... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/TVLSI.2017.2688862 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
Random access memory,Resistance,MOSFET,Failure analysis,Stacking | Silicon on insulator,Computer science,High density,Electronic engineering,Static random-access memory,Real-time computing,Planar,Memory array,MOSFET,Transistor,Electrical engineering,Stacking | Journal |
Volume | Issue | ISSN |
25 | 8 | 1063-8210 |
Citations | PageRank | References |
2 | 0.53 | 8 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Reda Boumchedda | 1 | 3 | 1.24 |
| Jean-Philippe Noël | 2 | 23 | 7.54 |
| Bastien Giraud | 3 | 53 | 17.41 |
| Kaya Can Akyel | 4 | 2 | 0.53 |
| Melanie Brocard | 5 | 2 | 0.53 |
| D. Turgis | 6 | 11 | 4.96 |
| Edith Beigne | 7 | 536 | 52.54 |