Name
Abstract | ||
|---|---|---|
An advanced high-temperature reverse bias (HTRB) testing procedure for performing reliability tests on power transistors is reported. The main target is to monitor continuously the degradation trend of tested devices. Therefore, the total HTRB test time is divided into short stress cycles. Thanks to a purposely designed miniature heater, which controls the individual case temperature of devices un... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/TIE.2017.2669882 | IEEE Transactions on Industrial Electronics |
Keywords | Field | DocType |
Temperature measurement,Stress,Reliability,Performance evaluation,Semiconductor device measurement,Standards,Electric variables measurement | Reverse bias,Infrasound,Power semiconductor device,Thermal runaway,Power MOSFET,Electronic engineering,Engineering,Thermal control,Temperature measurement,Semiconductor | Journal |
Volume | Issue | ISSN |
64 | 6 | 0278-0046 |
Citations | PageRank | References |
0 | 0.34 | 4 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| C. Pace | 1 | 129 | 19.43 |
| Jorge Hernandez-Ambato | 2 | 0 | 0.34 |
| Letizia Fragomeni | 3 | 0 | 1.01 |
| Giuseppe Consentino | 4 | 0 | 0.34 |
| Alessandro DrIgnoti | 5 | 0 | 0.34 |
| Salvatore Galiano | 6 | 0 | 0.34 |
| Antonio Grimaldi | 7 | 0 | 0.34 |