Name
Abstract | ||
|---|---|---|
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decaCNTFEdes. However, the bulk CMOS technology has approached the scaling limit due to the increased short-channel effects as technology scales down to 90 nm and below. Last about a decade witnessed a dramatic increase in nanotechnology research, especially the nano-electronics. These technologies vary in their maturity. Carbon nanotubes (CNTFETs) are at the forefront of these emerging technologies because of the unique mechanical and electronic properties. This paper discusses and reviews the feasibility of the CNTFET's application at this point of time in integrated circuits design by investigating different types of circuit blocks considering the advantages that the CNTFETs offer. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/ISOCC.2016.7799722 | 2016 International SoC Design Conference (ISOCC) |
Keywords | Field | DocType |
Carbon Nano Tube FET(CNTFET),integrated circuyits design,low power circuits,emerging technology | Scaling limit,Computer science,Electronic engineering,CMOS,Emerging technologies,Electronic properties,Carbon nanotube,Carbon nanotube field-effect transistor,Integrated circuit,Silicon | Conference |
ISSN | ISBN | Citations |
2163-9612 | 978-1-5090-3220-4 | 0 |
PageRank | References | Authors |
0.34 | 2 | 1 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yong-bin Kim | 1 | 338 | 55.72 |