Title
Comprehensive Study for Detection of Weak Resistive Open and Short Defects in FDSOI Technology
Abstract
This paper presents a detailed analysis for the detection of resistive open and resistive short defects using delay test for a didactic circuit implemented in 28nm UTBB FDSOI technology. The two different V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> options offered by the technology, i.e. Regular-V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> (RVT) and Low-VT (LVT), are explored. Based on HSPICE simulations, this work determines the most suitable operating conditions in terms of power supply and body biasing to achieve maximum coverage of resistive short and resistive open defects in the context of delay test. Results show that low supply voltage along with reverse body biasing favors the detection of resistive short defects, whereas high supply voltage combined with forward body biasing proves to be more appropriate for detection of resistive open defects.
Year
DOI
Venue
2017
10.1109/ISVLSI.2017.63
2017 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
Keywords
Field
DocType
Resistive open defects,Resistive short defects,Testability,FDSOI,Body Biasing,LVT,RVT
Silicon on insulator,Resistive touchscreen,Voltage,Electronic engineering,Engineering,Transistor,Electrical engineering,Biasing
Conference
ISBN
Citations 
PageRank 
978-1-5090-6763-3
0
0.34
References 
Authors
8
6
Name
Order
Citations
PageRank
Amit Karel131.78
Florence Azaïs2466.58
Mariane Comte3617.44
Jean Marc Gallière434.15
Michel Renovell574996.46
Keshav Singh64211.57