Name
Title | ||
|---|---|---|
23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS. |
Abstract | ||
|---|---|---|
Single-ended transceivers are mostly used for DRAM interfaces to reduce pin count. A low-supply transceiver is preferred, especially for mobile DRAM interfaces, for low-power consumption while maintaining a high-speed interface for transmission of image data [1]. To reduce transmitter power in single-ended transceivers, both the supply voltage and the signal swing are reduced: 0.8V and 200mV, or below [2]. However, with a small signal swing the low-supply voltage limits the maximum data rate that can be handled by the receiver (RX); the maximum data rate reported is below 10Gb/s with a supply voltage of 0.8V in 65nm CMOS [2-4]. In a conventional RX at a low-supply voltage, the maximum data rate is limited by the small g m /C of the RX front-end circuit. To eliminate this g m /C constraint, this work proposes a time-based RX for 12Gb/s operation at 0.8V. |
Year | Venue | Field |
|---|---|---|
2017 | ISSCC | Dram,Transmitter,Transceiver,Computer science,Voltage,CMOS,Electronic engineering,Data rate,Electrical engineering,Mobile telephony,Swing |
DocType | Citations | PageRank |
Conference | 0 | 0.34 |
References | Authors | |
4 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Il-Min Yi | 1 | 21 | 3.66 |
| Min-Kyun Chae | 2 | 22 | 4.01 |
| Seok-Hun Hyun | 3 | 2 | 2.79 |
| Seung-Jun Bae | 4 | 167 | 32.40 |
| Junghwan Choi | 5 | 279 | 33.08 |
| Seong-jin Jang | 6 | 99 | 27.16 |
| Byungsub Kim | 7 | 16 | 3.60 |
| Jae-yoon Sim | 8 | 508 | 83.58 |
| Hong-june Park | 9 | 465 | 72.93 |