Abstract | ||
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This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S
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< −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW. |
Year | DOI | Venue |
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2016 | 10.1109/ASSCC.2016.7844207 | 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC) |
Keywords | Field | DocType |
LNA,ultra-broadband,dual-LC tank,SiGe | Noise measurement,Computer science,Noise figure,Electrical impedance,Low noise,Electronic engineering,Bandwidth (signal processing),Transistor,Electrical engineering,dBm,Amplifier | Conference |
ISBN | Citations | PageRank |
978-1-5090-3701-8 | 1 | 0.48 |
References | Authors | |
2 | 5 |
Name | Order | Citations | PageRank |
---|---|---|---|
Zhe Chen | 1 | 1 | 1.16 |
Hao Gao | 2 | 17 | 8.67 |
Domine M. W. Leenaerts | 3 | 221 | 47.32 |
Dusan M. Milosevic | 4 | 43 | 14.06 |
Peter G. M. Baltus | 5 | 74 | 20.38 |