Title
Novel memory hierarchy with e-STT-MRAM for near-future applications
Abstract
In conclusion, e-STT-MRAM is thus expected to play much important and valuable role for wide range ICT applications. To increase those markets for long term, scalable MTJ technologies and co-optimization of technology, circuit and systems should be continuously developed for long-term reliable and secure ICT services.
Year
DOI
Venue
2017
10.1109/VLSI-TSA.2017.7942444
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Keywords
Field
DocType
secure ICT services,cooptimization,MTJ technologies,ICT applications,e-STT-MRAM,memory hierarchy
Sense amplifier,Semiconductor memory,Computer science,Non-volatile random-access memory,Universal memory,Static random-access memory,Non-volatile memory,eDRAM,Memory refresh,Embedded system
Conference
ISSN
ISBN
Citations 
2474-2724
978-1-5090-5806-8
0
PageRank 
References 
Authors
0.34
1
6
Name
Order
Citations
PageRank
Shinobu Fujita118022.11
Hiroki Noguchi214520.04
Kazutaka Ikegami3436.79
susumu takeda401.01
Nomura, K.531.09
Abe, K.6466.27