Name
Abstract | ||
|---|---|---|
With the scaling of technology, nanoscale CMOS integrated circuits are becoming more sensitive to single event double node upsets induced by charge sharing. A novel highly robust hardened latch design is presented that is fully resilient to single event double node upsets and single node upsets. The proposed latch employs multiple redundant C-elements to form a dual interlocked structure in which the redundant C-elements can bring the affected nodes back to the correct states regardless of the energy of the striking particle. Detailed HSPICE results confirm that the proposed latch features complete resilience to double node upsets and achieves an improved trade-off in terms of robustness, area, delay and power in comparison with previous latches. Extensive Monte Carlo simulations validate the proposed latch features as less sensitive to process, supply voltage and temperature variations. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1587/transele.E100.C.496 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
single event double node upset, single node upset, resilience, radiation hardened latch | Electronic engineering,Upset,Engineering,Embedded system | Journal |
Volume | Issue | ISSN |
E100C | 5 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 3 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Huaguo Liang | 1 | 216 | 33.27 |
| Xin Li | 2 | 0 | 0.34 |
| Zhengfeng Huang | 3 | 84 | 30.14 |
| Aibin Yan | 4 | 29 | 6.78 |
| Xiumin Xu | 5 | 7 | 3.24 |