Title
Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology.
Abstract
Radiation-induced soft error is an ever-increasing concern in the microelectronic industry in order to provide reliable VLSI systems at advanced technology nodes. Most of the redundancy-based methodologies adopt majority voters to ensure the fault masking. This paper presents a comparative analysis of different majority voter designs in 7 nm FinFET under radiation effects. The MUSCA SEP3 tool is used to estimate the SER of each circuit. Results show that NOR voter is less sensitive than the NAND voter. However, the SET pulse width is larger for the NOR voter than NAND voter. (C) 2017 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2017
10.1016/j.microrel.2017.06.077
MICROELECTRONICS RELIABILITY
Keywords
Field
DocType
Soft error,FinFET,MUSCA SEP3,Majority voters,Single event effects sensitivity,VLSI design
Masking (art),Soft error,Pulse-width modulation,NAND gate,Electronic engineering,Redundancy (engineering),Engineering,Very-large-scale integration,Majority voter,Radiation
Journal
Volume
ISSN
Citations 
76
0026-2714
1
PageRank 
References 
Authors
0.38
4
6
Name
Order
Citations
PageRank
Y. Q. de Aguiar110.72
Laurent Artola2162.46
Guillaume Hubert3234.06
Cristina Meinhardt42113.35
Fernanda Lima Kastensmidt555461.82
Ricardo A. L. Reis621748.75