Title
Subthreshold voltage reference with nwell/psub diode leakage compensation for low-power high-temperature systems
Abstract
This paper proposes a voltage reference operating up to 170 °C for low-power high-temperature systems. The proposed circuit buffers body voltages to avoid degradation of temperature coefficient from nwell/psub diode leakage. For low power overhead, it measures the diode leakage and adaptively adjusts the bias current of the buffers. This enables low power consumption at low temperature, which can allow an energy harvester to recharge a battery in the target system. Prototype chips, fabricated in a 180 nm CMOS process, show a ±3σ inaccuracy of 3.4% from 0 °C to 170 °C after single trim at 80 °C and a line sensitivity of 0.088 %/V from 1.8 V to 3.6 V. It consumes 76.3 pA at room temperature and 177 nA at 170 °C from 1.8 V.
Year
DOI
Venue
2017
10.1109/ASSCC.2017.8240267
2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)
Keywords
Field
DocType
voltage reference,body leakage,high temperature
Leakage (electronics),Computer science,Voltage reference,Diode,Electronic engineering,Breakdown voltage,CMOS,Subthreshold conduction,MOSFET,Optoelectronics,Biasing
Conference
ISBN
Citations 
PageRank 
978-1-5386-3179-9
0
0.34
References 
Authors
6
3
Name
Order
Citations
PageRank
Inhee Lee127533.89
Dennis Sylvester25295535.53
David Blaauw38916823.47