Title | ||
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A 1.4Mb 40-nm embedded ReRAM macro with 0.07um<sup>2</sup> bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application |
Abstract | ||
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Resistive RAM (ReRAM) is an attractive candidate for next generation embedded nonvolatile memory [1][2], with several advantages compared to conventional flash technology. First, ReRAM is a CMOS-compatible low temperature back-end of line (BEOL) memory. There is almost no mutual impact between ReRAM element and front-end CMOS devices during the wafer processing. Second, it only needs 2~4 extra masks, resulting in lower chip cost compared to embedded flash. Third, its byte-alterability makes it capable of being used as a unified memory for storage of instruction code and real-time data. In this work, a 1.4Mb HfOx-based embedded ReRAM macro with 0.07um
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
bit cell is fabricated in a 40nm CMOS process. A hybrid write-verify algorithm (HWVA) is used to tighten the resistance distribution and avoid over-write damage for achieving fast write and high endurance. Cycling test results show a write endurance of 10
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup>
cycles for the proposed HWVA. For low-power applications, a low power sensing scheme is presented for this 1.4Mb macro, achieving 100MHz read speed and 2.7mA/100MHz read current for 44-bits read operation. An area-efficient row-redundancy scheme and double-error-correction ECC are implemented for further improvement of yield and reliability. |
Year | DOI | Venue |
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2017 | 10.1109/ASSCC.2017.8240203 | 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) |
Keywords | Field | DocType |
ReRAM,HWVA,WCMS,MRWV | Wafer,Computer science,Electronic engineering,CMOS,Chip,Non-volatile memory,Macro,Maintenance engineering,Resistive random-access memory,Bit cell | Conference |
ISBN | Citations | PageRank |
978-1-5386-3179-9 | 1 | 0.35 |
References | Authors | |
1 | 5 |
Name | Order | Citations | PageRank |
---|---|---|---|
Chia-Fu Lee | 1 | 12 | 2.94 |
Hon-Jarn Lin | 2 | 8 | 2.07 |
Chiu-Wang Lien | 3 | 1 | 0.35 |
Yu-Der Chih | 4 | 100 | 14.94 |
Jonathan Yung-Cheng Chang | 5 | 166 | 25.48 |