Title
A 1.4Mb 40-nm embedded ReRAM macro with 0.07um<sup>2</sup> bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application
Abstract
Resistive RAM (ReRAM) is an attractive candidate for next generation embedded nonvolatile memory [1][2], with several advantages compared to conventional flash technology. First, ReRAM is a CMOS-compatible low temperature back-end of line (BEOL) memory. There is almost no mutual impact between ReRAM element and front-end CMOS devices during the wafer processing. Second, it only needs 2~4 extra masks, resulting in lower chip cost compared to embedded flash. Third, its byte-alterability makes it capable of being used as a unified memory for storage of instruction code and real-time data. In this work, a 1.4Mb HfOx-based embedded ReRAM macro with 0.07um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> bit cell is fabricated in a 40nm CMOS process. A hybrid write-verify algorithm (HWVA) is used to tighten the resistance distribution and avoid over-write damage for achieving fast write and high endurance. Cycling test results show a write endurance of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles for the proposed HWVA. For low-power applications, a low power sensing scheme is presented for this 1.4Mb macro, achieving 100MHz read speed and 2.7mA/100MHz read current for 44-bits read operation. An area-efficient row-redundancy scheme and double-error-correction ECC are implemented for further improvement of yield and reliability.
Year
DOI
Venue
2017
10.1109/ASSCC.2017.8240203
2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)
Keywords
Field
DocType
ReRAM,HWVA,WCMS,MRWV
Wafer,Computer science,Electronic engineering,CMOS,Chip,Non-volatile memory,Macro,Maintenance engineering,Resistive random-access memory,Bit cell
Conference
ISBN
Citations 
PageRank 
978-1-5386-3179-9
1
0.35
References 
Authors
1
5
Name
Order
Citations
PageRank
Chia-Fu Lee1122.94
Hon-Jarn Lin282.07
Chiu-Wang Lien310.35
Yu-Der Chih410014.94
Jonathan Yung-Cheng Chang516625.48