Name
Abstract | ||
|---|---|---|
A vertical Silicon Controlled Rectifier (VSCR) realized in a high-voltage (HV) 40V bipolar process is proposed for electrostatic discharge (ESD) protection applications. In addition, a new method is proposed to alter the layout of the emitter regions of the parasitic vertical PNP (VPNP) bipolar transistor in the VSCR to optimize the trigger voltage and the area of the VSCR. The transmission line pulsing (TLP) measurement results show that the VSCR possesses enhanced ESD robustness compared to the conventional vertical PNP (VPNP) bipolar transistor. The new VSCR can adjust trigger voltage, holding voltage and failure current with changing the number of emitter regions. Compare to VPNP bipolar transistor, the VSCR is more suitable for 40V bipolar process. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1016/j.microrel.2017.09.018 | Microelectronics Reliability |
Keywords | Field | DocType |
Vertical Silicon Controlled Rectifier (VSCR),Vertical PNP (VPNP),Electrostatic discharge (ESD),Trigger voltage,Emitter regions | Transmission line,Common emitter,Electrostatic discharge,Voltage,Electronic engineering,Robustness (computer science),Bipolar junction transistor,Engineering,Electrical engineering,Bipolar process,Silicon-controlled rectifier | Journal |
Volume | ISSN | Citations |
78 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Fan Liu | 1 | 0 | 0.34 |
| Zhiwei Liu | 2 | 0 | 0.68 |
| Jizhi Liu | 3 | 0 | 0.68 |
| Cheng Hui | 4 | 0 | 0.34 |
| Zhao Liu | 5 | 25 | 10.73 |
| Tian Rui | 6 | 0 | 0.34 |
| Shiyu Song | 7 | 3 | 2.07 |
| Juin J. Liou | 8 | 51 | 20.34 |