Title
ZnO-rGO Composite Thin Film Resistive Switching Device: Emulating Biological Synapse Behavior
Abstract
We have fabricated Sol-Gel synthesised Zinc Oxide (ZnO)-Reduced Graphene Oxide (rGO) on Fluorine-doped tin oxide (FTO) glass electrodes using a Dip Coating process. The Ag/ZnO-rGO/FTO sandwich structure showed bipolar resistive switching behavior. The resistive switching behavior can be attributed to the oxygen vacancies in the ZnO-rGO composite thin film giving rise to the formation and annihilation of conducting filament along the thin film. Good resistive switching (RS) characteristics with good On-OFF was also observed with good stability. The fabricated device has characteristics similar to that of biological synaptic plasticity and can be used for making electronics dynamical synapse.
Year
DOI
Venue
2016
10.1007/978-3-319-55071-8_15
Lecture Notes in Electrical Engineering
Keywords
DocType
Volume
Resistive switching,Zinc oxide,Graphene oxide,ZnO-rGO,Thin film,Synapse
Conference
429
ISSN
Citations 
PageRank 
1876-1100
0
0.34
References 
Authors
0
9