Name
Abstract | ||
|---|---|---|
This paper intends to present a novel radiation-hardened SRAM cell by using the PMOS transistors stacked (each PMOS is split into two same sizes) and changing the inner topological structure on basis of the Quatro-10T. Combined with layout-level optimization design, the 3-D TCAD mixed-mode simulation results show that the novel design has a great single event upset (SEU) immune. Simultaneously, it is found to be tolerant of partial single-event multiple-node upsets (SEMNUs) due to the charge sharing among off-PMOS transistors. In addition, compared with the Quatro-10T, our proposed structure exhibits larger static noise margin (SNM) as well as lower power consumption in 65 nm COMS technology. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1587/elex.14.20170784 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
radiation-hardened SRAM, single event upset, single-event multiple-node upsets, static noise margin, lower power consumption | Static noise margin,Computer science,Electronic engineering,Sram cell,Single event upset,Radiation | Journal |
Volume | Issue | ISSN |
14 | 18 | 1349-2543 |
Citations | PageRank | References |
2 | 0.38 | 1 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chunyu Peng | 1 | 30 | 10.29 |
| Zi-yang Chen | 2 | 69 | 14.25 |
| Jingbo Zhang | 3 | 5 | 3.52 |
| Songsong Xiao | 4 | 10 | 1.98 |
| Changyong Liu | 5 | 11 | 2.79 |
| Xiulong Wu | 6 | 7 | 4.65 |
| Zhiting Lin | 7 | 29 | 8.47 |