Title
An Extensible Code for Correcting Multiple Cell Upset in Memory Arrays
Abstract
As the microelectronics technology continuously advances to deep submicron scales, the occurrence of Multiple Cell Upset (MCU) induced by radiation in memory devices becomes more likely to happen. The implementation of a robust Error Correction Code (ECC) is a suitable solution. However, the more complex an ECC, the more delay, area usage and energy consumption. An ECC with an appropriate balance between error coverage and computational cost is essential for applications where fault tolerance is heavily needed, and the energy resources are scarce. This paper describes the conception, implementation, and evaluation of Column-Line-Code (CLC), a novel algorithm for the detection and correction of MCU in memory devices, which combines extended Hamming code and parity bits. Besides, this paper evaluates the variation of the 2D CLC schemes and proposes an additional operation to correct more MCU patterns called extended mode. We compared the implementation cost, reliability level, detection/correction rate and the mean time to failure among the CLC versions and other correction codes, proving the CLCs have high MCU correction efficacy with reduced area, power and delay costs.
Year
DOI
Venue
2018
https://doi.org/10.1007/s10836-018-5738-5
J. Electronic Testing
Keywords
Field
DocType
Error correction code (ECC),MCU,Memories
Mean time between failures,Hamming code,Parity bit,Computer science,Electronic engineering,Error detection and correction,Upset,Fault tolerance,Microcontroller,Computer hardware,Energy consumption
Journal
Volume
Issue
ISSN
34
4
0923-8174
Citations 
PageRank 
References 
0
0.34
9
Authors
6
Name
Order
Citations
PageRank
Felipe Silva131.78
Jardel Silveira200.34
Jarbas Silveira3206.62
Cesar A. M. Marcon412028.83
Fabian Vargas517130.44
Otávio Lima600.34