Name
Abstract | ||
|---|---|---|
Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write window and a read window of high-speed VoCSM from experimental data. The design windows of both writing and reading are large enough for gigabit memory. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/VLSIC.2018.8502420 | 2018 IEEE Symposium on VLSI Circuits |
Keywords | Field | DocType |
gigabit memory,magnetic memory,read window,high-speed VoCSM,voltage controlled magnetic anisotropy,high-speed voltage control spintronics memory,broad design windows,spin Hall effect,MRAM,write window | Spin Hall effect,Gigabit,Magnetic anisotropy,Computer science,Voltage control,Voltage,Spintronics,Magnetic memory,Magnetoresistive random-access memory,Electronic engineering | Conference |
ISSN | ISBN | Citations |
2158-5601 | 978-1-5386-4215-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 14 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Naoharu Shimomura | 1 | 47 | 6.49 |
| Hiroaki Yoda | 2 | 8 | 5.40 |
| Tomoaki Inokuchi | 3 | 1 | 1.03 |
| Katsuhiko Koi | 4 | 0 | 0.68 |
| Hideyuki Sugiyama | 5 | 1 | 1.03 |
| Yushi Kato | 6 | 0 | 0.34 |
| Yuichi Ohsawa | 7 | 0 | 0.68 |
| Altansargai Buyandalai | 8 | 0 | 0.34 |
| Satoshi Shirotori | 9 | 0 | 0.68 |
| Soichi Oikawa | 10 | 0 | 0.68 |
| Mariko Shimizu | 11 | 0 | 0.34 |
| Mizue Ishikawa | 12 | 1 | 1.03 |
| Tiwari Ajay | 13 | 0 | 0.34 |
| Atsushi Kurobe | 14 | 0 | 0.68 |