Name
Title | ||
|---|---|---|
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately |
Abstract | ||
|---|---|---|
The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/ESSDERC.2018.8486870 | 2018 48th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
IGBT,Injection Enhancement Effect | Analytical chemistry,Logic gate,Common emitter,Electron injection,MOSFET,Optoelectronics,Materials science,Periodic graph (geometry),Electrode,Electron | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-5386-5402-6 | 0 |
PageRank | References | Authors |
0.34 | 0 | 18 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| T. Hoshii | 1 | 0 | 1.01 |
| K. Furukawa | 2 | 0 | 0.34 |
| Kuniyuki Kakushima | 3 | 9 | 11.63 |
| M. Watanabe | 4 | 40 | 16.32 |
| N. Shigvo | 5 | 0 | 0.34 |
| Takuya Saraya | 6 | 1 | 2.17 |
| T. Takakura | 7 | 0 | 0.68 |
| K. Itou | 8 | 0 | 0.68 |
| M. Fukui | 9 | 0 | 0.68 |
| S. Suzuki | 10 | 0 | 0.68 |
| Kengo Takeuchi | 11 | 1 | 1.03 |
| I. Muneta | 12 | 0 | 0.34 |
| Hitoshi Wakabayashi | 13 | 0 | 0.68 |
| Shinichi Nishizawa | 14 | 0 | 0.68 |
| Kazuo Tsutsui | 15 | 6 | 9.26 |
| Toshiro Hiramoto | 16 | 27 | 8.14 |
| H. Ohashi | 17 | 0 | 1.01 |
| H. Lwai | 18 | 0 | 0.34 |