Author Info
Name
Affiliation
Papers
H. OHASHI
Tokyo Institute of Technology
3
Collaborators
Citations 
PageRank 
42
0
1.01
Referers 
Referees 
References 
0
0
0
Title
Citations
PageRank
Year
Switching of 3300V Scaled IGBT by 5V Gate Drive.00.342019
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately00.342018
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment00.342018