Paper Info
Title
Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs
Abstract
We present an experimental and theoretical investigation aimed at a full understanding of the main charge injection mechanisms involved in enhancement-mode p-GaN gate AlGaN/GaN-on-Si HFETs: substrate leakage in the off state for large drain-to-source voltage and charge injection in the p-GaN gate in the on state. We find that the leakage current from the substrate in the off state is sustained by field-enhanced carrier generation in the p-type Si substrate and is limited by electron injection through the AIN barrier/silicon interface. We also find that charge injection in the p-GaN during on state can lead to positive or negative variations of the threshold voltage, depending on the occurrence of hole depletion or accumulation in the p-GaN region, respectively, which in turn depends on the balance between hole injection in the p-GaN region through the Schottky gate contact and charge leakage from the p-GaN region to the channel.
Year
DOI
Venue
2018
10.1109/ESSDERC.2018.8486899
2018 48th European Solid-State Device Research Conference (ESSDERC)
Keywords
Field
DocType
substrate leakage,drain-to-source voltage,leakage current,field-enhanced carrier generation,electron injection,hole injection,charge leakage,charge injection mechanisms,enhancement-mode p-GaN gate,AlGaN-GaN-on-Si HFET,normally-off p-GaN gate,p-type Si substrate,AIN barrier-silicon interface,Schottky gate contact,Si,AlGaN-GaN-Si,AlN
Substrate (chemistry),Logic gate,Analytical chemistry,Leakage (electronics),Voltage,Electron injection,Charge injection,Threshold voltage,Optoelectronics,Materials science,Silicon
Conference
ISSN
ISBN
Citations 
1930-8876
978-1-5386-5402-6
0
PageRank 
References 
Authors
0.34
0
7
Name
Order
Citations
PageRank
Luca Savadi100.34
Giuseppe Iannaccone215224.49
Sebastien Sicre300.34
Simone Lavanza400.34
Gianluca Fiori5164.54
Oliver Haeberlen600.68
Gilberto Curatola701.01