Name
Abstract | ||
|---|---|---|
Spin-Transfer Torque RAM (STT-RAM) has attracted attention as a key element for the Last-Level Cache (LLC) of a future microprocessor. Since STT-RAM has a higher density than SRAM and non-volatility, STT-RAM can contribute to building the cache memory with a larger capacity and a less static energy. However, since STT-RAM changes its magnetization state in the case when storing data, the energy co... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/TMSCS.2018.2827955 | IEEE Transactions on Multi-Scale Computing Systems |
Keywords | DocType | Volume |
Energy consumption,SRAM cells,Magnetic tunneling,Transistors,Magnetization,Random access memory,Cache memory | Journal | 4 |
Issue | ISSN | Citations |
4 | 2332-7766 | 1 |
PageRank | References | Authors |
0.44 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masayuki Sato | 1 | 12 | 9.40 |
| Yoshiki Shoji | 2 | 1 | 0.44 |
| Zentaro Sakai | 3 | 1 | 0.78 |
| Ryusuke Egawa | 4 | 109 | 28.68 |
| Hiroaki Kobayashi | 5 | 1 | 1.12 |