Name
Abstract | ||
|---|---|---|
Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/ISOCC.2018.8649953 | 2018 International SoC Design Conference (ISOCC) |
Keywords | Field | DocType |
SRAM cells,Memristors,Nonvolatile memory,Couplings,Circuit faults,Testing | Memristor,Computer science,Resistive touchscreen,Electronic engineering,Static random-access memory,Non-volatile memory,Sram cell,Transistor | Conference |
ISSN | ISBN | Citations |
2163-9612 | 978-1-5386-7960-9 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yu-Ting Li | 1 | 1 | 0.73 |
| Jin-Fu Li | 2 | 662 | 59.17 |
| Chun-Lung Hsu | 3 | 59 | 14.53 |
| Chi-Tien Sun | 4 | 0 | 1.35 |