Name
Title | ||
|---|---|---|
Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon |
Abstract | ||
|---|---|---|
Sub-wavelength quantum dot microdisk lasers were directly grown on (001) silicon by MOVPE. Lasing in C-band up to 60 °C was achieved with a low RT threshold of 3.7 gW and a high T0 of 130 K. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/ECOC.2017.8345911 | 2017 European Conference on Optical Communication (ECOC) |
Keywords | DocType | ISBN |
room temperature lasing,silicon,MOVPE method,sub-wavelength quantum-dot microdisk lasers,temperature 60.0 degC,temperature 130.0 K,temperature 293 K to 298 K,InGaAs | Conference | 978-1-5386-4993-0 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Si Zhu | 1 | 0 | 0.34 |
| Bei Shi | 2 | 0 | 0.34 |
| Qiang Li | 3 | 0 | 1.01 |
| Yating Wan | 4 | 0 | 0.68 |
| Evelyn L. Hu | 5 | 0 | 0.68 |
| Kei May Lau | 6 | 3 | 3.54 |