Title
Radiation sensitivity of XOR topologies in multigate technologies under voltage variability
Abstract
Integrated Circuits are becoming more susceptible to numerous effects due to the reduction of its robustness to external noise. Additionally, the increase of uncertainty degree related to the many sources of variation in the manufacturing process contributes to the reliability issues. This work is aimed at presenting a comparative analysis of radiation sensitivity of different XOR implementations using two multigate devices: double-gate FinFET and Trigate. Trigate-based circuits have shown to be more robust than FinFET with improvement percentage from 6,2% up to 12,6% in the threshold LET. Further, voltage fluctuation can reduce the threshold LET up to 20,8%, increasing the susceptibility of the analyzed circuits.
Year
DOI
Venue
2017
10.1109/LASCAS.2017.7948075
2017 IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS)
Keywords
Field
DocType
Radiation Sensitivity,FinFET,Trigate,XOR logic gate,Voltage Variability
Logic gate,Radiation sensitivity,Computer science,Voltage,Electronic engineering,Robustness (computer science),Network topology,Electronic circuit,Integrated circuit,Threshold voltage
Conference
ISBN
Citations 
PageRank 
978-1-5090-5860-0
1
0.42
References 
Authors
3
3
Name
Order
Citations
PageRank
Ygor Q. de Aguiar110.42
Cristina Meinhardt22113.35
Ricardo A. L. Reis321748.75