Paper Info
Title
New triggering-speed-characterization method for diode-triggered SCR using TLP.
Abstract
The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method, based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements. (C) 2017 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2017
10.1016/j.microrel.2017.07.063
MICROELECTRONICS RELIABILITY
Keywords
Field
DocType
Critical charge,DTSCR,Electrostatic discharge (ESD),IEC,Radio frequency (RF),TLP,Turn-on time
Rectifier,Transmission line,Diode,Electronic engineering,Engineering,Electrical engineering,Critical charge,Turn on time
Journal
Volume
ISSN
Citations 
76
0026-2714
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Mouna Mahane100.34
David Trémouilles2138.69
M. Bafleur377.06
Benjamin Thon400.34
Marianne Diatta500.34
Lionel Jaouen600.34