Title
A 280 KBytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-voltage Generating Systems
Abstract
A novel sensing current protection enhanced (SCPE) technique and high-voltage (HV) generating systems are adopted to greatly enhance the advantages of the twin-bit cell. The SCPE technique provides the tradeoff of sensing margin loss between “1” and “0” bits sensing case to realize fast read access. The read speed is improved by 7.7%. HV generating systems with parallel-series-transform and capaci...
Year
DOI
Venue
2018
10.1109/TCSII.2017.2764179
IEEE Transactions on Circuits and Systems II: Express Briefs
Keywords
Field
DocType
Sensors,Computer architecture,Microprocessors,Flash memories,Decoding,Capacitance,Manufacturing
Capacitance,Flash memory,Access time,Semiconductor device fabrication,Voltage,Electronic engineering,Charge pump,High voltage,Mathematics,Bit cell
Journal
Volume
Issue
ISSN
65
11
1549-7747
Citations 
PageRank 
References 
0
0.34
0
Authors
9
Name
Order
Citations
PageRank
Yiran Xu1114.06
Wenyi Zhu221.40
Jun Xiao373.33
Guangjun Yang432.88
Jian Hu500.34
Shengbo Zhang611.41
Mingyong Huang700.68
Weiran Kong810.77
Shichang Zou92012.47