Title | ||
---|---|---|
A 280 KBytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-voltage Generating Systems |
Abstract | ||
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A novel sensing current protection enhanced (SCPE) technique and high-voltage (HV) generating systems are adopted to greatly enhance the advantages of the twin-bit cell. The SCPE technique provides the tradeoff of sensing margin loss between “1” and “0” bits sensing case to realize fast read access. The read speed is improved by 7.7%. HV generating systems with parallel-series-transform and capaci... |
Year | DOI | Venue |
---|---|---|
2018 | 10.1109/TCSII.2017.2764179 | IEEE Transactions on Circuits and Systems II: Express Briefs |
Keywords | Field | DocType |
Sensors,Computer architecture,Microprocessors,Flash memories,Decoding,Capacitance,Manufacturing | Capacitance,Flash memory,Access time,Semiconductor device fabrication,Voltage,Electronic engineering,Charge pump,High voltage,Mathematics,Bit cell | Journal |
Volume | Issue | ISSN |
65 | 11 | 1549-7747 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
9 |
Name | Order | Citations | PageRank |
---|---|---|---|
Yiran Xu | 1 | 11 | 4.06 |
Wenyi Zhu | 2 | 2 | 1.40 |
Jun Xiao | 3 | 7 | 3.33 |
Guangjun Yang | 4 | 3 | 2.88 |
Jian Hu | 5 | 0 | 0.34 |
Shengbo Zhang | 6 | 1 | 1.41 |
Mingyong Huang | 7 | 0 | 0.68 |
Weiran Kong | 8 | 1 | 0.77 |
Shichang Zou | 9 | 20 | 12.47 |