Author Info
Name
Affiliation
Papers
YIRAN XU
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, Beijing, Shanghai, ChinaChinaChina
11
Collaborators
Citations 
PageRank 
36
11
4.06
Referers 
Referees 
References 
43
103
23
Search Limit
100103
Title
Citations
PageRank
Year
A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory10.362020
Substation One-Line Diagram Automatic Generation and Visualization.00.342019
Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications.40.452019
A Novel Highly Reliable And Low-Power Radiation Hardened Sram Bit-Cell Design20.392018
A Novel Self-Recoverable And Triple Nodes Upset Resilience Dice Latch30.402018
A 280 KBytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-voltage Generating Systems00.342018
A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory With a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems.00.342018
A Novel Seu Tolerant Memory Cell For Space Applications00.342018
A macro SPICE model for 2-bits/cell split-gate flash memory cell.00.342017
Area-Efficient Charge Pump With Local Boost Technique For Embedded Flash Memory00.342017
Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory.10.432016