Title
Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs
Year
DOI
Venue
2019
10.1007/s11432-018-9791-2
Science China Information Sciences
Field
DocType
Volume
Control theory,Buried oxide,Optoelectronics,Mathematics
Journal
62
Issue
ISSN
Citations 
6
1869-1919
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
Qin Huang13011.60
Renhua Liu200.34
Yabin Sun300.34
Xiaojin Li400.34
Yanling Shi500.34
Changfeng Wang600.34
Duanduan Liao700.34
Ming Tian801.01