Name
Title | ||
|---|---|---|
Fast and Reliable STT-MRAM Using Nonuniform and Adaptive Error Detecting and Correcting Scheme |
Abstract | ||
|---|---|---|
Spin-transfer torque magnetic random access memory (STT-MRAM) is an emerging nonvolatile memory technology and a potential candidate to replace CMOS-based on-chip memories. However, the bit-cell switching behavior is stochastic, which is further exacerbated due to the temperature and the process variation (PV) effects, leading to reliability failures. The conventional solution to mitigate such err... |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/TVLSI.2019.2903592 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
Thermal stability,Switches,Magnetic tunneling,Error correction codes,Thermal factors,Stability analysis | Computer science,Cache,Electronic engineering,Magnetoresistive random-access memory,Error detection and correction,CMOS,Non-volatile memory,Process variation,Cluster analysis,Computer engineering,Random access | Journal |
Volume | Issue | ISSN |
27 | 6 | 1063-8210 |
Citations | PageRank | References |
1 | 0.36 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nour Sayed | 1 | 3 | 2.07 |
| Rajendra Bishnoi | 2 | 132 | 19.64 |
| Mehdi B. Tahoori | 3 | 1537 | 163.44 |