Name
Title | ||
|---|---|---|
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination |
Abstract | ||
|---|---|---|
In this work, we utilize electrically detected magnetic resonance via the bipolar amplification effect to explore the physical and chemical nature of defects at the 4H-SiC/SiO
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interface in metal-oxide-semiconductor field effect transistors. Defects at and very near the 4H-SiC/SiO
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interface are involved in bias temperature instabilities in 4H-SiC transistor technology. Of particular relevance to reliability physics, our results indicate that oxygen deficient silicon atoms in the near-interface oxide, known as E’ centers, can be greatly reduced utilizing nitric oxide and barium annealing. E’ centers have been directly linked to bias temperature instabilities in 4H-SiC technology. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/IRPS.2019.8720423 | 2019 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | Field | DocType |
MOSFETs,EDMR,Reliability,SiC,BAE | Engineering physics,Spin-½,Recombination,Electronic engineering,Engineering | Conference |
ISSN | ISBN | Citations |
1541-7026 | 978-1-5386-9504-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| James P. Ashton | 1 | 0 | 0.34 |
| Patrick M. Lenahan | 2 | 1 | 1.06 |
| Daniel J. Lichtenwalner | 3 | 0 | 1.01 |
| Aivars J. Lelis | 4 | 0 | 1.69 |
| Mark A. Anders | 5 | 185 | 17.43 |