Name
Abstract | ||
|---|---|---|
We have developed a methodology for analyzing the impact of mechanical stress on the electrical performance of 3D NAND devices. The methodology relies on in-situ electrical characterization of 3D NAND flash memory under application of an external load with a nanoindenter. The forces applied in the experiment are converted to stress using finite element modeling and the obtained values are correlated with electrical characteristics. With this method, I
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>
and I
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>
degradation with compressive stress along the memory channel is demonstrated and compared for three types of channel materials: polysilicon full channel, single crystal silicon full channel, and polysilicon macaroni channel. TCAD simulations attribute the changes in I
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>
and I
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf>
to mobility decrease and Shockley-Read-Hall generation rate increase under stress, respectively. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/IRPS.2019.8720410 | 2019 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | Field | DocType |
3D NAND,FLASH memory,mechanical stress,reliability | Electrical performance,Mechanical engineering,Stress (mechanics),Electronic engineering,NAND gate,Engineering | Conference |
ISSN | ISBN | Citations |
1541-7026 | 978-1-5386-9504-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Kruv | 1 | 0 | 0.34 |
| A. Arreghini | 2 | 0 | 0.34 |
| M.B. Gonzalez | 3 | 5 | 3.79 |
| D. Verreck | 4 | 0 | 0.34 |
| G. Van den bosch | 5 | 3 | 0.79 |
| I. De Wolf | 6 | 17 | 7.89 |
| Arnaud Furnemont | 7 | 2 | 2.76 |