Name
Abstract | ||
|---|---|---|
In this paper, we explore the influence of the fully recessed gate length on threshold voltage instabilities. The study has been performed by the use of ultra-fast pBTI measurements on GaN-on-Si E-mode MOSc-HEMTs, as well as TCAD simulations. It reveals that gate length reduction tends to decrease the pBTI degradation. Transient analyses (degradation/relexation) reveal same dynamics whatever the gate length while the value of the initial V
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directly influences BTI. TCAD simulations highlight that the full recess gate configuration creates a short-channel effect responsible for this peculiar Vth degradation. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/IRPS.2019.8720554 | 2019 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | Field | DocType |
GaN-on-Si HEMT reliability,E-mode GaN,DC pBTI,ultrafast pBTI | Electronic engineering,Engineering,High-electron-mobility transistor,Optoelectronics | Conference |
ISSN | ISBN | Citations |
1541-7026 | 978-1-5386-9504-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 12 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A.G. Viey | 1 | 0 | 0.34 |
| W. Vandendaele | 2 | 1 | 1.30 |
| MA Jaud | 3 | 0 | 0.34 |
| R. Gwoziecki | 4 | 1 | 0.76 |
| A. Torres | 5 | 0 | 0.34 |
| M. Plissonnier | 6 | 0 | 0.34 |
| F. Gaillard | 7 | 0 | 0.34 |
| Gérard Ghibaudo | 8 | 51 | 34.87 |
| R. Modica | 9 | 0 | 0.34 |
| F. Iucolano | 10 | 0 | 0.34 |
| M. Meneghini | 11 | 0 | 0.68 |
| G. Meneghesso | 12 | 52 | 22.83 |