Paper Info
Title
Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology
Abstract
The paper presents a balanced RF power amplifier designed by using Horizontal Current Bipolar Transistors (HCBT). The near-50-Ω large-signal input and output impedances of HCBT are exploited to achieve wideband operation. Matching and bias networks are designed in microstrip technology and the optimization is performed using electromagnetic simulator. Signal splitting and combining is achieved by microstrip double-box branchline hybrid couplers, which are optimized for wide bandwidth and high return loss. Bias lines are implemented as quarter-wavelength short-circuited shunt stubs, which provide short circuit for even harmonics and open circuit for the fundamental frequency over the entire operating bandwidth. The amplifier is implemented on a low-cost 1-mm-thick FR4 substrate. At 1-dB compression point, the amplifier exhibits 21.4 dBm output power and 10.4 dB gain in the frequency range from 1.8 GHz to 2.5 GHz, with input and output return losses higher than 20 dB while using pure-silicon HCBT technology.
Year
DOI
Venue
2019
10.23919/MIPRO.2019.8756724
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Keywords
Field
DocType
Horizontal Current Bipolar Transistor (HCBT),Wireless communication,Power amplifiers,Balanced power amplifiers
Wideband,Return loss,Computer science,Computer network,Harmonics,Bandwidth (signal processing),Bipolar junction transistor,RF power amplifier,Electrical engineering,Microstrip,Amplifier
Conference
ISBN
Citations 
PageRank 
978-1-5386-9296-7
0
0.34
References 
Authors
0
4
Name
Order
Citations
PageRank
Zeljko Osrecki100.34
Josip Zilak202.70
Marko Koricic303.04
Tomislav Suligoj419.41