Name
Abstract | ||
|---|---|---|
In this paper, we analyze the electrical behavior of a new type of technological defect appearing in the most recent technological process achieving extremely high interconnection density by using the Self-Aligned Double Patterning technique (SADP). This totally new defect mechanism, which could not appear in conventional CMOS technologies, is structurally dependent of the SADP technique and can be considered as a simultaneous combination of Bridge and Open: we consequently named it B-open. The electrical behavior of the B-Open defect is analyzed and shown that the defect exhibits some classical electrical characteristics of Bridge defect and Open defect but also an unprecedented electrical mixed behavior of both defects. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ETS.2019.8791524 | 2019 IEEE European Test Symposium (ETS) |
Keywords | Field | DocType |
SADP,Bridge defect,Open defect,B-open defect | Engineering physics,Interconnection density,Computer science,Electronic engineering,CMOS,Multiple patterning,Nanometre | Conference |
ISSN | ISBN | Citations |
1530-1877 | 978-1-7281-1174-2 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Freddy Forero | 1 | 0 | 2.70 |
| Michel Renovell | 2 | 749 | 96.46 |
| Víctor H. Champac | 3 | 0 | 0.34 |