Name
Title | ||
|---|---|---|
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS |
Abstract | ||
|---|---|---|
In the design of nonvolatile memory (NVM), the sensing scheme (SS) has become a read-energy bottleneck because the required read-cell current is too large to satisfy a target read yield. This problem is further aggravated by technology scaling because increased process variation and reduced supply voltage (
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) require more current to satisfy the target read yield. This paper proposes an offset-canceling single-ended SS (OCSE-SS) with one-bit-line precharge architecture (1BLPA) that is intended for use in ultralow power NVM applications. The test chip is fabricated using 65-nm process technology, and the measurement results show that the read energy per bit of the OCSE-SS is 1/3 compared to that of the conventional SS (Conv-SS). The read energy reduction comes from the single-ended sensing, offset cancellation, and 1BLPA features. Moreover, when a resistance difference between the data and reference cells is as small as
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, the OCSE-SS reads successfully with a
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of 1.0 V and a sensing time (
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) of 17 ns due to the offset cancellation characteristic, whereas the Conv-SS fails regardless of
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and
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values. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/TVLSI.2019.2925931 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
Sensors,Nonvolatile memory,Memory management,Resistance,Very large scale integration,Phase change random access memory | Topology,Computer science,Resistive touchscreen,Voltage,Electronic engineering,Chip,CMOS,Non-volatile memory,Process variation,Very-large-scale integration,Offset (computer science) | Journal |
Volume | Issue | ISSN |
27 | 11 | 1063-8210 |
Citations | PageRank | References |
2 | 0.39 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Taehui Na | 1 | 95 | 9.98 |
| Byungkyu Song | 2 | 23 | 5.94 |
| Sara Choi | 3 | 4 | 2.17 |
| Jung-Pill Kim | 4 | 101 | 12.78 |
| Seung H. Kang | 5 | 139 | 12.36 |
| Seong-ook Jung | 6 | 332 | 53.74 |