Name
Abstract | ||
|---|---|---|
This brief presents a novel mode-switch sense amplifier (SA) for embedded Flash (eFlash) memories, which is capable of operating at a wide range power supply voltage from 0.9V to 1.7V. A new dynamic bit-line (BL) clamping circuit and a voltage-boosted column multiplexer are also introduced to increase the clamped BL voltage at low supply voltage. Along with the enhanced current reference and voltage reference generating circuit for automatic sensing window tracking, the proposed SA can achieve a larger sensing window, and consequently improve the sensing speed. This SA is implemented in a 2-Mb eFlash memory on HHGrace 130nm CMOS platform. The high-speed access time of 19ns and 46ns are respectively achieved at typical power supply voltage (1.5V) and low supply voltage (1.0V). |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/TCSII.2019.2939160 | IEEE Transactions on Circuits and Systems II: Express Briefs |
Keywords | DocType | Volume |
Embedded flash memory,sense amplifier,low voltage,wide range supply voltage,mode-switch | Journal | 67 |
Issue | ISSN | Citations |
8 | 1549-7747 | 1 |
PageRank | References | Authors |
0.36 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Wenyi Zhu | 1 | 5 | 1.48 |
| Jianwei Jiang | 2 | 10 | 2.61 |
| Haineng Zhang | 3 | 1 | 0.70 |
| Yiran Xu | 4 | 11 | 4.06 |
| Jun Xiao | 5 | 7 | 3.33 |
| Guangjun Yang | 6 | 3 | 2.88 |
| Shichang Zou | 7 | 20 | 12.47 |