Name
Title | ||
|---|---|---|
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications |
Abstract | ||
|---|---|---|
This letter presents a 2-Mb embedded phase change memory (ePCM) macrocell designed in 90-nm BJT-CMOS-DMOS (BCD) technology able to address the next generation of automotive and smart-power products exploiting an ePCM cell based on a Ge-rich chalcogenide alloy. The optimized memory allows 16-ns random access time and 5-Mbit/s write throughput from −40 °C to 175 °C, with 100 kcycle endurance. The sense amplifier, the programming circuitry, and the data processing logic able to meet automotive requirements are described. The silicon results are provided. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ESSCIRC.2019.8902656 | ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC) |
Keywords | DocType | ISSN |
Automotive applications,embedded memory,germanium-rich alloy,nonvolatile memory,phase change memory,smart power devices | Conference | 1930-8833 |
ISBN | Citations | PageRank |
978-1-7281-1551-1 | 3 | 0.58 |
References | Authors | |
2 | 22 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Marcella Carissimi | 1 | 5 | 3.24 |
| R. Mukherjee | 2 | 3 | 0.58 |
| Vivek Tyagi | 3 | 3 | 0.58 |
| F. Disegni | 4 | 6 | 2.37 |
| D. Manfrè | 5 | 5 | 1.41 |
| C. Torti | 6 | 5 | 1.41 |
| Daniele Gallinari | 7 | 5 | 1.21 |
| S. Rossi | 8 | 3 | 0.58 |
| A. Gambero | 9 | 3 | 0.58 |
| Donatella Brambilla | 10 | 3 | 0.58 |
| P. Zuliani | 11 | 3 | 0.58 |
| Riccardo Zurla | 12 | 3 | 0.92 |
| Alessandro Cabrini | 13 | 108 | 24.11 |
| Guido Torelli | 14 | 240 | 64.39 |
| Marco Pasotti | 15 | 10 | 3.68 |
| Chantal Auricchio | 16 | 3 | 0.58 |
| Emanuela Calvetti | 17 | 3 | 0.58 |
| Laura Capecchi | 18 | 5 | 1.88 |
| Luigi Croce | 19 | 14 | 2.60 |
| S. Zanchi | 20 | 3 | 0.58 |
| Vikas Rana | 21 | 3 | 0.58 |
| P. Mishra | 22 | 3 | 0.58 |