Title | ||
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Dark Count Rate Modeling in Single-Photon Avalanche Diodes for Space LIDAR Applications |
Abstract | ||
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In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology CAD (TCAD) simulations and a Matlab routine. |
Year | DOI | Venue |
---|---|---|
2019 | 10.1109/NEWCAS44328.2019.8961280 | 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS) |
Keywords | Field | DocType |
Single Photon Avalanche Diode (SPAD),Complementary Metal-Oxide Semiconductor (CMOS),Modeling and simulations,Dark Count Rate (DCR),Technology CAD (TCAD),Matlab | Photon,Population,MATLAB,Computer science,Diode,Electronic engineering,CMOS,Lidar,Semiconductor,Technology CAD | Conference |
ISSN | ISBN | Citations |
2472-467X | 978-1-7281-1032-5 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Aymeric Panglosse | 1 | 1 | 1.42 |
Philippe Martin-Gonthier | 2 | 4 | 2.01 |
Olivier Marcelot | 3 | 0 | 1.01 |
Cédric Virmontois | 4 | 0 | 0.34 |
Olivier Saint-Pé | 5 | 1 | 2.10 |
Pierre Magnan | 6 | 4 | 3.72 |