Title
Dark Count Rate Modeling in Single-Photon Avalanche Diodes for Space LIDAR Applications
Abstract
In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology CAD (TCAD) simulations and a Matlab routine.
Year
DOI
Venue
2019
10.1109/NEWCAS44328.2019.8961280
2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)
Keywords
Field
DocType
Single Photon Avalanche Diode (SPAD),Complementary Metal-Oxide Semiconductor (CMOS),Modeling and simulations,Dark Count Rate (DCR),Technology CAD (TCAD),Matlab
Photon,Population,MATLAB,Computer science,Diode,Electronic engineering,CMOS,Lidar,Semiconductor,Technology CAD
Conference
ISSN
ISBN
Citations 
2472-467X
978-1-7281-1032-5
0
PageRank 
References 
Authors
0.34
0
6