Name
Title | ||
|---|---|---|
Self-Heating Induced Variability And Reliability In Advanced Logic Devices And Circuits |
Abstract | ||
|---|---|---|
Non-planar device structures such as FinFETs are widely used in advanced CMOS technology, the non-planar structures with confined narrow channel region and the low thermal conductivity of materials will prevent heat dissipation, resulting in a localized lattice temperature rise, named self-heating effect (SHE) [1]–[3]. The SHE not only causes transistorsu0027 and circuitsu0027 performance varability and degradation but also exacerbates degradation of transistorsu0027 reliability and leading to the reduction of circuitu0027s lifetime, which becomes a significant challenge to device engineers and circuit designers [4]–[6]. Thus, the self-heating effect is one of the important issues in the semiconductor industry. For device optimization and circuit design, it is necessary to capture self-heating induced statistical variability and reliability during circuit operation. Normally, the worst-case analysis for SHE at device and circuit level is used to provide a thermal-aware design guide, however, it may cause an inaccurate estimation as self-heating can be different in actual circuit operation. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ASICON47005.2019.8983608 | 2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) |
Field | DocType | ISSN |
Self heating,Computer science,Statistical variability,Circuit design,Communication channel,CMOS,Electronic engineering,Transistor,Electronic circuit,Thermal conductivity | Conference | 2162-7541 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiaoyan Liu | 1 | 109 | 19.35 |
| Wangyong Chen | 2 | 0 | 0.68 |
| Linlin Cai | 3 | 0 | 0.68 |
| Gang Du | 4 | 37 | 12.19 |
| zhang | 5 | 10 | 9.77 |